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RJK0351DPA
Silicon N Channel Power MOS FET Power Switching
REJ03G1646-0200 Rev.2.00 Apr 10, 2008
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 10 V) * Pb-free * * * * *
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5678 DDDD
5678
4 G
4 321
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 30 20 40 160 40 17 28.9 45 2.78 150 -55 to +150 Unit V V A A A A mJ W C/W C C
REJ03G1646-0200 Rev.2.00 Apr 10, 2008 Page 1 of 6
RJK0351DPA
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 3.2 4.3 90 2560 470 180 2.4 17 6.3 3.7 8.6 5.0 52 6.4 0.82 25 Max -- 0.1 1 2.5 4.2 6.0 -- -- -- -- -- -- -- -- -- -- -- -- 1.07 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VGS = 10 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, VGS = 4.5 V, ID = 40 A VGS = 10 V, ID = 20 A, VDD 10 V, RL = 0.57 , Rg = 4.7 IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1646-0200 Rev.2.00 Apr 10, 2008 Page 2 of 6
RJK0351DPA
Main Characteristics
Power vs. Temperature Derating
80 1000
Maximum Safe Operation Area
Pch (W)
ID (A)
10 s
100
10 0 s
60
Channel Dissipation
Drain Current
40
10
1 ms
PW = 10 ms
DC e Op
20
1
Operation in this area is limited by RDS(on) Tc = 25C
ra tio n
0
50
100
150
200
0.1 1 shot Pulse 0.1 1
10
100
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
50 4.5 V 10 V Pulse Test 3.0 V 3.2 V 30 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
40
40
30
Drain Current
20
VGS = 2.6 V
20 25C -25C
10
10
Tc = 75C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
200
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS (on) (m)
100 Pulse Test
Drain to Source Saturation Voltage VDS (on) (mV)
Pulse Test
150
30
100
10 VGS = 4.5 V 3 10 V 1 1
ID = 20 A
50 10 A
5A
0
4
8
12
16
20
3
10
30
100
300 1000
Gate to Source Voltage
VGS (V)
Drain Current
ID
(A)
REJ03G1646-0200 Rev.2.00 Apr 10, 2008 Page 3 of 6
RJK0351DPA
Static Drain to Source on State Resistance vs. Temperature
10 Pulse Test 10000 3000
Static Drain to Source on State Resistance RDS (on) (m)
Typical Capacitance vs. Drain to Source Voltage
Capacitance C (pF)
8 ID = 5 A, 10 A, 20 A 6 VGS = 4.5 V 4 10 V 5 A, 10 A, 20 A
Ciss 1000 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30
Coss Crss
2 0 -25
0
25
50
75
100 125 150
Case Temperature
Tc
(C)
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
VGS (V)
20 50
Dynamic Input Characteristics
VDS (V)
50
Reverse Drain Current IDR (A)
ID = 40 A
VGS 16 VDD = 25 V 10 V
Pulse Test 10 V 40 5V
40
Drain to Source Voltage
30 VDS 20
12
Gate to Source Voltage
30
8
20 VGS = 0, -5 V
10
VDD = 25 V 10 V 0 20 40 60 80
4
10
0
0 100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
50 IAP = 17 A 40 VDD = 15 V duty < 0.1 % Rg 50 30
20
10 0 25
50
75
100
125
150
Channel Temperature Tch (C)
REJ03G1646-0200 Rev.2.00 Apr 10, 2008 Page 4 of 6
RJK0351DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1
D=1 0.5
0.3
0.2
0.1
0.1
ch - c (t) = s (t) * ch - c ch - c = 2.78C/W, Tc = 25C PDM PW T 100 1m 10 m 100 m 1 10 D= PW T
0.05
0.03
0 .02
p 1 0.0 hot s 1
ul
se
0.01 10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1 2 L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP VDD VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
D. U. T
ID
Vin 15 V 50 0 VDD
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor
Switching Time Waveform
90% 10% 10% 10%
90% td(on) tr
90% td(off) tf
REJ03G1646-0200 Rev.2.00 Apr 10, 2008 Page 5 of 6
RJK0351DPA
Package Dimensions
Package Name WPAK JEITA Package Code - RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g
Unit: mm
0.5 0.15
4.21Typ 1.27Typ
5.1 0.2
0.8Max
3.9 0.2
6.1
5.9
0.04Min
0.7Typ
0.635Max
1.27Typ
0.2Typ
0.5 0.15
3.8 0.2
+0.1 -0.3
+0.1 -0.2
0.4 0.06
0.05Max 0Min Stand-off
4.9 0.1
(Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists.
Ordering Information
Part No. RJK0351DPA-00-J0 Quantity 2500 pcs Taping Shipping Container
REJ03G1646-0200 Rev.2.00 Apr 10, 2008 Page 6 of 6
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